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Growth and Experimental Evidence of Quantum Confinement Effects in Cu(2)O and CuO Thin Films
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
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2011 (English)In: Journal of Nano Research, ISSN 1662-5250, Vol. 15, 69-74 p.Article in journal (Refereed) Published
Abstract [en]

Thin Cu films of thickness 0.4 - 150 nm were deposited via radio frequency magnetron sputtering on Si(100) wafers, corning glass and quartz. Subsequently the Cu films were oxidized in ambient air at 230 degrees C and 425 degrees C in order to produce single-phase Cu(2)O and CuO, respectively. Selected samples were measured in the transmission geometry with the help of an ultraviolet - visible spectrophotometer. From the absorption spectra of the films, it was found that the gap E(B) for the dipole allowed transitions showed blue shifts of about 1.2 eV for the Cu(2)O thinnest film (0.75 nm), whereas the E(direct) for the direct gap transitions showed blue shifts of about 0.16 eV for the CuO thinnest film (0.7 mm). The blue shift of the energy gap in the copper-oxide semiconductors is an indication of the presence of strong quantum confinement effects.

Place, publisher, year, edition, pages
2011. Vol. 15, 69-74 p.
Keyword [en]
Cu, oxide thin films, quantum confinement effects, optoelectronics, photovoltaics
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-161303DOI: 10.4028/www.scientific.net/JNanoR.15.69ISI: 000295909100008OAI: oai:DiVA.org:uu-161303DiVA: diva2:455716
Available from: 2011-11-11 Created: 2011-11-10 Last updated: 2011-11-18Bibliographically approved

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