uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Transparent yttrium hydride thin films prepared by reactive sputtering
Institute for Energy Technology, Kjeller, Norge.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Institute for Energy Technology, Kjeller, Norge.
Institute for Energy technology, Kjeller, Norge.
Show others and affiliations
2011 (English)In: Journal of Alloys and Compounds, ISSN 0925-8388, E-ISSN 1873-4669, Vol. 509, S812-S816 p.Article in journal (Refereed) Published
Abstract [en]

Metal hydrides have earlier been suggested for utilization in solar cells. With this as a motivation we have prepared thin films of yttrium hydride by reactive magnetron sputter deposition. The resulting films are metallic for low partial pressure of hydrogen during the deposition, and black or yellow-transparent for higher partial pressure of hydrogen. Both metallic and semiconducting transparent YH(x) films have been prepared directly in situ without the need of capping layers and post-deposition hydrogenation. Optically the films are similar to what is found for YH(x) films prepared by other techniques, but the crystal structure of the transparent films differ from the well-known YH(3-eta) phase, as they have an fcc lattice instead of hcp.

Place, publisher, year, edition, pages
2011. Vol. 509, S812-S816 p.
Keyword [en]
Metal hydrides, Semiconductors, Thin films, Vapor deposition, Optical properties, Photoconductivity, Photovoltaics
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-161070DOI: 10.1016/j.jallcom.2010.12.032ISI: 000295695500067OAI: oai:DiVA.org:uu-161070DiVA: diva2:456351
Available from: 2011-11-14 Created: 2011-11-07 Last updated: 2017-12-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Platzer-Björkman, Charlotte

Search in DiVA

By author/editor
Platzer-Björkman, Charlotte
By organisation
Solid State Electronics
In the same journal
Journal of Alloys and Compounds
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 786 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf