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Mobility Profiles and Thermal Characterization of SOI and Si-on-SiC hybrid substrates
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2011 (English)In: 2011 IEEE International SOI Conference Proceedings, 2011Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents new results revealing the electrical properties of the silicon-on-polycrystalline silicon carbide hybrid substrate. The thermal resistance in the substrate was measured and compared to simulations and is linked to the measured reduced self-heating in LDMOS transistors. The mobility in the device layer was extracted and shows slightly lower values in the hybrid compared to the SOI. Furthermore, the gate oxide integrity was evaluated suggesting that the poly-Si layer in the Si/SiC hybrid may act as a gettering layer for impurities due to the lower QBD spread.

Place, publisher, year, edition, pages
2011.
Series
IEEE International SOI Conference, ISSN 1078-621X
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-161820DOI: 10.1109/SOI.2011.6081708ISI: 000298390800033ISBN: 978-1-61284-759-7 (print)OAI: oai:DiVA.org:uu-161820DiVA: diva2:457563
Conference
2011 IEEE International SOI Conference, Tempe Arizona, October 3-6 2011
Available from: 2011-11-18 Created: 2011-11-18 Last updated: 2013-11-12

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Lotfi, SaraLi, Ling-GuangVallin, ÖrjanNorström, HansOlsson, Jörgen

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