Fabrication and Characterization of 150 mm Silicon-on-polycrystalline-Silicon Carbide Substrates
2012 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 41, no 3, 480-487 p.Article in journal (Refereed) Published
Silicon-on-insulator (SOI) substrates can reduce RF-substrate losses due to their buried oxide (BOX). On the other hand, the BOX causes problems since it acts as a thermal barrier. Oxide has low thermal conductivity and traps the heat that is generated in devices on the SOI. This paper presents a hybrid substrate which uses a thin layer of poly-crystalline silicon and poly-crystalline silicon carbide (Si-on-poly-SiC) to replace the thermally unfavorable buried oxide and the silicon substrate. 150 mm substrates were fabricated by wafer bonding and shown to be stress and strain free. Various electronic devices and test structures were processed on the hybrid substrate as well as on a low resistivity SOI reference wafer. The substrates were characterized electrically and thermally and compared to each other. Results showed that the Si-on-poly-SiC wafer had a 2.5 times lower thermal resistance and was equally or better in electrical performance compared to the SOI reference wafer.
Place, publisher, year, edition, pages
2012. Vol. 41, no 3, 480-487 p.
Engineering and Technology Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-162180DOI: 10.1007/s11664-011-1827-2ISI: 000299930100009OAI: oai:DiVA.org:uu-162180DiVA: diva2:463809