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High-power impulse magnetron sputtering of Ti–Si–C thin films from a Ti3SiC2 compound target
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
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2006 (English)In: Thin Solids Films, ISSN 0040-6090, Vol. 515, no 4, 1731-1736 p.Article in journal (Refereed) Published
Abstract [en]

We have deposited Ti–Si–C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with direct-current magnetron sputtering under comparable conditions were rough and porous. We show that, due to the high degree of ionization of the sputtered species obtained in HIPIMS, the film composition, in particular the C content, depends on substrate inclination angle and Ar process pressure.

Place, publisher, year, edition, pages
2006. Vol. 515, no 4, 1731-1736 p.
Keyword [en]
HIPIMS, Titanium silicon carbide
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-18756DOI: 10.1016/j.tsf.2006.06.015ISI: 000242931900079OAI: oai:DiVA.org:uu-18756DiVA: diva2:46528
Available from: 2006-11-22 Created: 2006-11-22 Last updated: 2011-02-18Bibliographically approved

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Wilhelmsson, OlaJansson, Ulf

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