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Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon
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2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, no 9, 094107- p.Article in journal (Refereed) Published
Abstract [en]

This work examines the structural and electrical properties of HfSixOy film based metal-insulator-semiconductor capacitors by means of x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage (C-V), deep level transient spectroscopy, and conductance transient (G-t) techniques. Hafnium-rich silicate films were atomic layer deposited onto HF-etched or SiO2 covered silicon. Although as-deposited samples exhibit high interfacial state and disorder-induced gap state densities, a postdeposition thermal annealing in vacuum under N2 flow for 1 min at temperatures between 600 and 730 °C clearly improves the interface quality. Marked crystallization and phase separation occurred at 800 °C, increasing the structural heterogeneity and defect density in the dielectric oxide layers.

Place, publisher, year, edition, pages
2006. Vol. 100, no 9, 094107- p.
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Inorganic Chemistry
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URN: urn:nbn:se:uu:diva-18759DOI: 10.1063/1.2358831ISI: 000242041500076OAI: oai:DiVA.org:uu-18759DiVA: diva2:46531
Available from: 2006-11-22 Created: 2006-11-22 Last updated: 2017-12-08Bibliographically approved

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Rooth, MårtenWilhelmsson, OlaHårsta, Anders

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