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Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
2006 (English)In: Thin Solids Films, Vol. 514, no 1-2, 63-68 p.Article in journal (Refereed) Published
Abstract [en]

Thin films of the tetragonal rutile-type SnO2 phase have been deposited by both atomic layer deposition (ALD) and chemical vapour deposition (CVD) using the SnI4–O2 precursor combination. Depositions were carried out in the temperature region of 350–750 °C on α-Al2O3(0 1 2) substrates. In both cases the films were found to grow epitaxially with the in-plane orientation relationships [0 1 0]SnO2 || [1 0 0]α-Al2O3 and [1 0 1¯]SnO2 || [1¯ 2¯ 1]α-Al2O3. Films grown by ALD were found to be close to perfectly single crystalline, contained a low density of defects and were almost atomically smooth. The CVD films were found to have a much rougher film morphology, and exhibited both grain boundaries and twin formation.

Place, publisher, year, edition, pages
2006. Vol. 514, no 1-2, 63-68 p.
Keyword [en]
Tin oxide, Chemical vapor deposition, Atomic layer deposition, X-ray diffraction, Transmission electron microscopy
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-18829DOI: doi:10.1016/j.tsf.2006.02.031OAI: oai:DiVA.org:uu-18829DiVA: diva2:46601
Available from: 2006-11-23 Created: 2006-11-23 Last updated: 2011-01-11

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Ottosson, MikaelHårsta, Anders

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