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Thin films of Co3O4 have been successfully deposited on SiO2/Si(100) and MgO(001) substrates by atomic layer deposition (ALD) using the precursor combination CoI2/O2. The deposition temperature was found to have a strong influence on the growth rate. On SiO2/Si(100) substrates, growth rates of about 0.2 nm per cycle were recorded at 500 °C, decreasing to 0.004 nm per cycle at 700 °C. On MgO(001) substrates the growth rates were lower, reaching about 0.12 nm per cycle at 475 °C, while no growth could be detected at 700 °C. The films were found to grow as the cubic Co3O4 phase throughout the temperature range 475-700 °C, polycrystalline on SiO2/Si(100), and epitaxial on MgO(001). On MgO(001) the epitaxial relationship was established to the in-plane orientation (001)[100]Co3O4||(001)[100]MgO. No iodine could be detected by Rutherford backscattering spectroscopy (RBS) or by X-ray fluorescence (XRF) spectroscopy in any of the deposited films.