Atomic Layer Deposition of Co3O4 Thin Films Using a CoI2/O2 Precursor Combination
2006 (English)In: Chemical Vapor Deposition, Vol. 12, no 4, 209-213 p.Article in journal (Refereed) Published
Thin films of Co3O4 have been successfully deposited on SiO2/Si(100) and MgO(001) substrates by atomic layer deposition (ALD) using the precursor combination CoI2/O2. The deposition temperature was found to have a strong influence on the growth rate. On SiO2/Si(100) substrates, growth rates of about 0.2 nm per cycle were recorded at 500 °C, decreasing to 0.004 nm per cycle at 700 °C. On MgO(001) substrates the growth rates were lower, reaching about 0.12 nm per cycle at 475 °C, while no growth could be detected at 700 °C. The films were found to grow as the cubic Co3O4 phase throughout the temperature range 475-700 °C, polycrystalline on SiO2/Si(100), and epitaxial on MgO(001). On MgO(001) the epitaxial relationship was established to the in-plane orientation (001)Co3O4||(001)MgO. No iodine could be detected by Rutherford backscattering spectroscopy (RBS) or by X-ray fluorescence (XRF) spectroscopy in any of the deposited films.
Place, publisher, year, edition, pages
2006. Vol. 12, no 4, 209-213 p.
Atomic layer deposition, Cobalt oxides, Precursors, metal iodide
IdentifiersURN: urn:nbn:se:uu:diva-18833DOI: doi:10.1002/cvde.200506447OAI: oai:DiVA.org:uu-18833DiVA: diva2:46605