Hysteresis effect in reactive high power impulse magnetron sputtering of metal oxides
2011 (English)Conference paper (Refereed)
In order to get high deposition rate and good film properties, the stabilization of the transition zone between the metallic and compound modes is beneficial. We have shown earlier that at least in some cases, HiPIMS can reduce hysteresis effect in reactive sputtering. In our previous work, mechanisms for the suppression/elimination of the hysteresis effect have been suggested. Reactive HiPIMS can suppress/eliminate the hysteresis effect in the range of optimum frequency  lead to the process stability during the deposition with high deposition rate. The mechanisms behind this optimum frequency may relate with high erosion rate during the pulse [2,3] and gas rarefaction effect in front of the target .
In this contribution, reactive sputtering process using high power impulse magnetron sputtering (HiPIMS) has been studied with focus on the gas rarefaction. Through variations in the sputtering conditions such as pulse frequencies, peak powers, and target area, their effect on the shape of current waveforms have been analyzed. The current waveforms in compound mode are strongly affected. Our experiments show that the shape and amplitude of peak current cannot be explained by the change of the secondary electron yield due to target oxidation only. Reduced rarefaction in compound mode contributes to the observed very high peak current values.
Place, publisher, year, edition, pages
Fusion, Plasma and Space Physics Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-164332OAI: oai:DiVA.org:uu-164332DiVA: diva2:467364
10th International Conference on Reactive Sputter Deposition, RSD 2011, Linkoping, December 8-9