Sputter Yield Amplification of reactively sputtered TiO2
2011 (English)Conference paper (Refereed)
TiO2 is a material with attractive properties which have led to various applications such as anti-reflective coatings  or self cleaning surfaces . One of the most applied deposition techniques used for TiO2 is reactive magnetron sputtering. Unfortunately TiO2 suffers from a comparatively low deposition rate when reactively sputtered. To increase the deposition rate, Sputter Yield Amplification (SYA) can be used through recoil of the sputtering species at implanted heavy dopants below the target surface [3,4]. Here we present experimental results showing a large increase of the TiO2 deposition rate when doped with Tungsten.
Although SYA has been proposed earlier , the production of doped targets was complicated. We have built a designated sputter deposition tool which enables systematic studies of SYA. In this study the rate increase by SYA is investigated for two different dopants, namely Tungsten and Bismuth. Bismuth was chosen since it is the heaviest non-radioactive material available. Our experiments show that the rate increase of TiO2 by Bismuth is surprisingly low. Tungsten on the other hand results in a large rate increase of 160% in DC and 220% in HiPIMS mode. A number of additional experiments have been carried out to verify and explain this observation. Finally TRIDYN  simulations have been performed which reproduce the experimental results.
Place, publisher, year, edition, pages
Ceramics Fusion, Plasma and Space Physics
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-164336OAI: oai:DiVA.org:uu-164336DiVA: diva2:467384
10th International Conference on Reactive Sputter Deposition, RSD 2011, Linkoping, December 8-9