Growth kinetics, properties, performance, and stability of atomic layer deposition Zn–Sn–O buffer layers for Cu(In,Ga)Se2 solar cells
2012 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 20, no 7, 883-891 p.Article in journal (Refereed) Published
A new atomic layer deposition process was developed for deposition of Zn–Sn–O buffer layers for Cu(In,Ga)Se2 solar cells with tetrakis(dimethylamino) tin, Sn(N(CH3)2)4, diethyl zinc, Zn(C2H5)2, and water, H2O. The new processgives good control of thickness and [Sn]/([Sn]+[Zn]) content of the films. The Zn–Sn–O films are amorphous as foundby grazing incidence X-ray diffraction, have a high resistivity, show a lower density compared with ZnO and SnOx, andhave a transmittance loss that is smeared out over a wide wavelength interval. Good solar cell performance was achievedfor a [Sn]/([Sn]+[Zn]) content determined to be 0.15–0.21 by Rutherford backscattering. The champion solar cell with aZn–Sn–O buffer layer had an efficiency of 15.3% (Voc=653mV, Jsc(QE)=31.8mA/cm2, and FF=73.8%) compared with15.1% (Voc=663mV, Jsc(QE)=30.1mA/cm2, and FF=75.8%) of the best reference solar cell with a CdS buffer layer. Thereis a strong light-soaking effect that saturates after a few minutes for solar cells with Zn–Sn–O buffer layers after storage in thedark. Stability was tested by 1000h of dry heat storage in darkness at 85°C, where Zn–Sn–O buffer layers with a thicknessof 76nm retained their initial value after a few minutes of light soaking.
Place, publisher, year, edition, pages
2012. Vol. 20, no 7, 883-891 p.
Other Physics Topics Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-164361DOI: 10.1002/pip.1153ISI: 000310075200007OAI: oai:DiVA.org:uu-164361DiVA: diva2:467753