uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Growth kinetics, properties, performance, and stability of atomic layer deposition Zn–Sn–O buffer layers for Cu(In,Ga)Se2 solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström solar center)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström solar center)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström solar center)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Ångström solar center)
Show others and affiliations
2012 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 20, no 7, 883-891 p.Article in journal (Refereed) Published
Abstract [en]

A new atomic layer deposition process was developed for deposition of Zn–Sn–O buffer layers for Cu(In,Ga)Se2 solar cells with tetrakis(dimethylamino) tin, Sn(N(CH3)2)4, diethyl zinc, Zn(C2H5)2, and water, H2O. The new processgives good control of thickness and [Sn]/([Sn]+[Zn]) content of the films. The Zn–Sn–O films are amorphous as foundby grazing incidence X-ray diffraction, have a high resistivity, show a lower density compared with ZnO and SnOx, andhave a transmittance loss that is smeared out over a wide wavelength interval. Good solar cell performance was achievedfor a [Sn]/([Sn]+[Zn]) content determined to be 0.15–0.21 by Rutherford backscattering. The champion solar cell with aZn–Sn–O buffer layer had an efficiency of 15.3% (Voc=653mV, Jsc(QE)=31.8mA/cm2, and FF=73.8%) compared with15.1% (Voc=663mV, Jsc(QE)=30.1mA/cm2, and FF=75.8%) of the best reference solar cell with a CdS buffer layer. Thereis a strong light-soaking effect that saturates after a few minutes for solar cells with Zn–Sn–O buffer layers after storage in thedark. Stability was tested by 1000h of dry heat storage in darkness at 85°C, where Zn–Sn–O buffer layers with a thicknessof 76nm retained their initial value after a few minutes of light soaking.

Place, publisher, year, edition, pages
2012. Vol. 20, no 7, 883-891 p.
National Category
Other Physics Topics Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-164361DOI: 10.1002/pip.1153ISI: 000310075200007OAI: oai:DiVA.org:uu-164361DiVA: diva2:467753
Available from: 2011-12-19 Created: 2011-12-19 Last updated: 2017-12-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Hultqvist, AdamPlatzer-Björkman, CharlotteZimmermann, UweEdoff, MarikaTörndahl, Tobias

Search in DiVA

By author/editor
Hultqvist, AdamPlatzer-Björkman, CharlotteZimmermann, UweEdoff, MarikaTörndahl, Tobias
By organisation
Solid State Electronics
In the same journal
Progress in Photovoltaics
Other Physics TopicsEngineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 876 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf