Electrical modeling of Cu(In,Ga)Se2 cells with ALD-Zn1xMgxO bufferlayers
2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 1, 014509-014509 p.Article in journal (Refereed) Published
Electrical modeling of Cu(In,Ga)Se2 solar cells with Zn1-xMgxO buffer layers is performed. A number of different device models are implemented and tested by comparing simulation results and measurement data. Room temperature light-soaking and dark-light cross-over behavior as well aslow-temperature characteristics of these cells are studied. The light-soaking improvements in the solarcell parameters are attributed to an increase in buffer donor density, due to persistent photoconductivity, that counteracts charged acceptors in the absorber-buffer region. Dark-light JV-curvecross-over is explained by deep acceptor defects with small electron capture cross-section, in thebuffer. Best correspondence to measurements on ZnO and Zn0.83Mg0.17O cells is obtained with models including absorber-buffer interface acceptor states. No wideband-gap surface defect layer is needed to reproduce measurement data.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012. Vol. 111, no 1, 014509-014509 p.
CIGS solar cells, electrical modeling, alternative buffer layers, metastabilities
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-166753DOI: 10.1063/1.3672813ISI: 000299127200108OAI: oai:DiVA.org:uu-166753DiVA: diva2:477404