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Ferromagnetism in Mn doped half-Heusler NiTiSn: Theory and experiment
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 21, 212502- p.Article in journal (Refereed) Published
Abstract [en]

In this letter, the authors show by ab initio density functional calculations and experiments that Mn doped semiconducting half-Heusler compound NiTiSn can exhibit room-temperature ferromagnetism. Curie temperatures were calculated by Monte Carlo simulations using calculated Heisenberg exchange parameters in an ab initio Green's function approach. The calculated temperature exceeds room temperature for a Mn doping concentration of 22%. Magnetic measurements confirm the presence of possible intrinsic ferromagnetism in these systems. This brings up the possibility of considering this system as a potential candidate for use in room-temperature spintronic devices.

Place, publisher, year, edition, pages
2006. Vol. 89, no 21, 212502- p.
Keyword [en]
Magnetism, diluted magnetic semiconductor, Curie temperature, SQUID
National Category
Condensed Matter Physics Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-20291DOI: 10.1063/1.2393166ISI: 000242220000049OAI: oai:DiVA.org:uu-20291DiVA: diva2:48064
Available from: 2007-02-14 Created: 2007-02-14 Last updated: 2017-12-08Bibliographically approved

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Sanyal, BiplabEriksson, OlleNordblad, Per

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