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Influence of SOI-generated stress on BiCMOS performance
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
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2006 (English)In: Solid-State Electronics, ISSN 0038-1101, Vol. 50, no 6, 935-942 p.Article in journal (Refereed) Published
Abstract [en]

Two BiCMOS processes were adapted for SOI and the performance of the bipolar devices was studied. Differences in electrical parameters were observed, in particular the current gain, which processing or doping profiles could not explain, but correlated with observed stress in transistors. Simulation of the process flow with stress included revealed that stress was generated to a higher degree in the SOI wafers in the presence of deep trench isolation (DTI). Theoretical estimations and electrical simulations with and without stress yielded results consistent with observed data. Thus, we conclude that the observed differences are caused by process-induced in-plane biaxial stress.

Place, publisher, year, edition, pages
2006. Vol. 50, no 6, 935-942 p.
Keyword [en]
BiCMOS, SOI, Silicon-on-insulator, Trench isolation, Bipolar
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Other Materials Engineering
Identifiers
URN: urn:nbn:se:uu:diva-22222DOI: 10.1016/j.sse.2006.04.034OAI: oai:DiVA.org:uu-22222DiVA: diva2:49995
Available from: 2007-01-12 Created: 2007-01-12 Last updated: 2016-07-12

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Smith, Ulf

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