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Transient current electric field profiling of single crystal CVD diamond
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
2006 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 21, no 8, 1193-1195 p.Article in journal (Refereed) Published
Abstract [en]

The transient current technique ( TCT) has been adapted for profiling of the electric field distribution in intrinsic single crystal CVD diamond. It was found that successive hole transits do not appreciably affect the electric field distribution within the sample. Transits of holes can therefore be used to probe the electric field distribution and also the distribution of trapped charge. Electron transits, on the other hand, cause an accumulation of negative charge in the sample. Illumination with blue or green light was shown to lead to accumulation of positive charge. Low concentrations of trapped charge can be detected in diamond using TCT, corresponding to an ionized impurity concentration below N = 10(10) cm(-3).

Place, publisher, year, edition, pages
2006. Vol. 21, no 8, 1193-1195 p.
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-22417DOI: 10.1088/0268-1242/21/8/035ISI: 000240123100036OAI: oai:DiVA.org:uu-22417DiVA: diva2:50190
Available from: 2007-01-23 Created: 2007-01-23 Last updated: 2011-06-21Bibliographically approved
In thesis
1. Charge Transport in Single-crystalline CVD Diamond
Open this publication in new window or tab >>Charge Transport in Single-crystalline CVD Diamond
2010 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. Future diamond devices, such as power diodes, photoconductive switches and high-frequency field effect transistors, could in principle deliver outstanding performance due to diamond's excellent intrinsic properties. However, such electronic applications put severe demands on the crystalline quality of the material.

Many fundamental electronic properties of diamond are still poorly understood, which severely holds back diamond-based electronic device and detector development. This problem is largely due to incomplete knowledge of the defects in the material and due to a lack of understanding of how these defects influence transport properties.

Since diamond lacks a shallow dopant that is fully thermally activated at room temperature, the conventional silicon semiconductor technology cannot be transferred to diamond devices; instead, new concepts have to be developed. Some of the more promising device concepts contain thin delta-doped layers with a very high dopant concentration, which are fully activated in conjunction with undoped (intrinsic) layers where charges are transported. Thus, it is crucial to better understand transport in high-quality undoped layers with high carrier mobilities.

The focus of this doctoral thesis is therefore the study of charge transport and related electronic properties of single-crystalline plasma-deposited (SC-CVD) diamond samples, in order to improve knowledge on charge creation and transport mechanisms. Fundamental characteristics such as drift mobilities, compensation ratios and average pair-creation energy were measured. Comparing them with theoretical predictions from simulations allows for verification of these models and improvement of the diamond deposition process.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2010. 87 p.
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 746
CVD diamond, wide-bandgap semiconductor, single-crystalline diamond, carrier transport, time-of-flight, drift velocity, mobility, compensation, pair-creation, electronic devices, diamond detector, diamond diode
urn:nbn:se:uu:diva-122794 (URN)978-91-554-7815-5 (ISBN)
Public defence
2010-06-04, Siegbahnsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (English)
Available from: 2010-05-12 Created: 2010-04-20 Last updated: 2010-05-18Bibliographically approved

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