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Microstructural Investigation of SiOx Thin Films Grown by Reactive Sputtering on (001) Si Substrates
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2012 (English)In: Journal of Nano Research, ISSN 1661-9897, Vol. 17, 147-156 p.Article in journal (Refereed) Published
Abstract [en]

In the Current Study, the Structural Characteristics of Siox Thin Films Grown by Magnetron Sputtering on Si Substrates Are Reported. High Resolution Transmission Electron Microscopy Revealed the Formation of Amorphous Siox Films for the as-Deposited Samples, as Well as the Ones Annealed in Ambient Air for 30 Min at 950oC and of Si Nanocrystals, Embedded in Amorphous Siox, after Ar Annealing for 1-4 Hours at 1000oC. the Nanocrystals, with Sizes up to 6 Nm, Predominately Exhibit {111} Lattice Planes. Energy-Dispersive X-Ray Analysis Showed that the Si/O Ratio Is between 0.5-1, I.e. the Amorphous Films Comprise of a Mixture of Sio2 and Sio. Phase Images and Corresponding Strain Maps Created Using Fourier Filtering Revealed a Uniform Contrast in the Nanocrystals, which Shows that the Si Lattice Constant Does Not Vary Significantly. the Residual Strain Variations, around 4%, May Account for the Possible Existence of a Small Percentage of Highly Disordered Si or Siox Residual Clusters inside the Regular Si Matrix, in Full Agreement with Photoluminescence Measurements Performed on the same Materials.

Place, publisher, year, edition, pages
2012. Vol. 17, 147-156 p.
National Category
Condensed Matter Physics
Research subject
Physics of Matter
Identifiers
URN: urn:nbn:se:uu:diva-168983DOI: 10.4028/www.scientific.net/JNanoR.17.147ISI: 000301027500011OAI: oai:DiVA.org:uu-168983DiVA: diva2:504583
Available from: 2012-02-21 Created: 2012-02-21 Last updated: 2012-03-27Bibliographically approved

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Kapaklis, Vassilios

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