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Strain-induced topological insulating behavior in ternary chalcogenide Ge2Sb2Te5
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.
2012 (English)In: Europhysics letters, ISSN 0295-5075, E-ISSN 1286-4854, Vol. 97, no 2, 27003- p.Article in journal (Refereed) Published
Abstract [en]

We unraveled the strain-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab initio calculations. The semiconductor-to-topological-insulator (TI) transition of Ge2Sb2Te5 were induced by the strains along the < 100 > and < 110 > direction as well as the shear strains. Ge2Sb2Te5 exhibits three types of TI-characterized conducting surface states: the single Dirac cone feature, the odd band-type and the Bi2Se3-type. The physical origin of the semiconductor-TI transition is the strain-induced inversion of the characterizations of conduction band minimum and valence band maximum with spin-orbit coupling. The present results suggest that GST-related materials are a new family of strain-induced TI.

Place, publisher, year, edition, pages
2012. Vol. 97, no 2, 27003- p.
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Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-170803DOI: 10.1209/0295-5075/97/27003ISI: 000300259100035OAI: oai:DiVA.org:uu-170803DiVA: diva2:509570
Available from: 2012-03-13 Created: 2012-03-13 Last updated: 2017-12-07Bibliographically approved

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Ahuja, Rajeev

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