Controllable oxidation of h-BN monolayer on Ir(111) studied by core-level spectroscopies
2012 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 606, no 3-4, 564-570 p.Article in journal (Refereed) Published
The effect of atomic oxygen adsorption on the structure and electronic properties of monolayer hexagonal boron nitride (h-BN) grown on Ir(111) has been studied using near edge X-ray absorption fine structure spectroscopy (NEXAFS), photoelectron spectroscopy (PES), and low-energy electron diffraction (LEED). It has been shown that the oxidation of the h-BN monolayer occurs through a gradual substitution of N by O in the h-BN lattice. This process leads to the formation of defect sites corresponding to three different types of the B atom environment (BN3-xOx with x=1,2,3). The oxidation of the h-BN monolayer is very different from the case of graphene on Ir(111), where adsorption of atomic oxygen results mainly in the formation of epoxy groups [J. Phys. Chem. C. 115, 9568 (2011)]. A post-annealing of the h-BN monolayer after oxygen exposure results in further destruction of the B N bonds and formation of a B2O3-like structure.
Place, publisher, year, edition, pages
2012. Vol. 606, no 3-4, 564-570 p.
Photoelectron spectroscopy, Near-edge X-ray absorption fine structure, h-BN monolayer, Graphene, Oxidation
IdentifiersURN: urn:nbn:se:uu:diva-171678DOI: 10.1016/j.susc.2011.11.031ISI: 000300458600072OAI: oai:DiVA.org:uu-171678DiVA: diva2:512101