uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
Nanostructure and Temperature-dependent Photoluminescence of Er-doped Y2O3 Thin Films for Micro-optoelectronic Integrated Circuits
Show others and affiliations
2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, no 7, 073512- p.Article in journal (Refereed) Published
Abstract [en]

The nanostructure and photoluminescence of polycrystalline Er-doped Y2O3 thin films, deposited by radical-enhanced atomic layer deposition (ALD), were investigated in this study. The controlled distribution of erbium separated by layers of Y2O3, with erbium concentrations varied from 6 to 14 at. %, was confirmed by elemental electron energy loss spectroscopy (EELS) mapping of Er M-4 and M-5. This unique feature is characteristic of the alternating radical-enhanced ALD of Y2O3 and Er2O3. The results are also consistent with the extended x-ray absorption fine structure (EXAFS) modeling of the Er distribution in the Y2O3 thin films, where the EXAFS data were best fitted to a layer-like structure. X-ray diffraction (XRD) and selected-area electron diffraction (SAED) patterns revealed a preferential film growth in the [111] direction, showing a lattice contraction with increasing Er doping concentration, likely due to Er3+ of a smaller ionic radius replacing the slightly larger Y3+. Room-temperature photoluminescence characteristic of the Er3+ intra-4f transition at 1.54 mu m was observed for the 500 A, 8 at. % Er-doped Y2O3 thin film, showing various well-resolved Stark features due to different spectroscopic transitions from the I-4(13/2)-> I-4(15/2) energy manifold. The result indicates the proper substitution of Y3+ by Er3+ in the Y2O3 lattice, consistent with the EXAFS and XRD analyses. Thus, by using radical-enhanced ALD, a high concentration of optically active Er3+ ions can be incorporated in Y2O3 with controlled distribution at a low temperature, 350 degrees C, making it possible to observe room-temperature photoluminescence for fairly thin films (similar to 500-900 A) without a high temperature annealing.

Place, publisher, year, edition, pages
2006. Vol. 100, no 7, 073512- p.
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-23525DOI: 10.1063/1.2349477ISI: 000241248000023OAI: oai:DiVA.org:uu-23525DiVA: diva2:51299
Available from: 2007-04-25 Created: 2007-04-25 Last updated: 2011-05-20Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Lu, JunBlom, Hans-Olof
By organisation
In the same journal
Journal of Applied Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 383 hits
ReferencesLink to record
Permanent link

Direct link