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Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2006 (English)Conference paper (Refereed)
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Engineering and Technology
URN: urn:nbn:se:uu:diva-23537OAI: oai:DiVA.org:uu-23537DiVA: diva2:51311
WoDiM 2006, 14th Workshop on Dielectrics in Microelectronics, Santa Tecla, Italy June
Available from: 2007-01-30 Created: 2007-01-30 Last updated: 2016-06-22

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Sjöblom, GustafOlsson, Jörgen
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