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P-Type Nitrogen-Doped ZnO Nanoparticles Stable under Ambient Conditions
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2012 (English)In: Journal of the American Chemical Society, ISSN 0002-7863, E-ISSN 1520-5126, Vol. 134, no 1, 464-470 p.Article in journal (Refereed) Published
Abstract [en]

Zinc oxide is considered as a very promising material for optoelectronics. However, to date, the difficulty in producing stable p-type ZnO is a bottleneck, which hinders the advent of ZnO-based devices. In that context, nitrogen-doped zinc oxide receives much attention. However, numerous reviews report the controversial character of p-type conductivity in N-doped ZnO, and recent theoretical contributions explain that N-doping alone cannot lead, to p-typeness in Zn-rich ZnO. We report here that the ammonolysis at low temperature or ZnO2 yields pure wurtzite-type N-doped ZnO nanoparticles with an extraordinarily large amount of Zn vacancies (up to 20%). Electrochemical and transient spectroscopy studies demonstrate that these Zn-poor nanoparticles exhibit a p-type conductivity that is stable over more than 2 years under ambient conditions.

Place, publisher, year, edition, pages
2012. Vol. 134, no 1, 464-470 p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-172157DOI: 10.1021/ja208044kISI: 000301084200081OAI: oai:DiVA.org:uu-172157DiVA: diva2:513746
Available from: 2012-04-03 Created: 2012-04-02 Last updated: 2017-12-07Bibliographically approved

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Hammarstrom, Leif

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