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Ni and Ti diffusion barrier layers between Ti-Si-C and Ti-Si-C-Ag nanocomposite coatings and Cu-based substrates
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
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2012 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, no 8-9, 2558-2565 p.Article in journal (Refereed) Published
Abstract [en]

Sputtered Ni and Ti layers were investigated as a diffusion barrier to substitute electroplated Ni between Ti-Si-C and Ti-Si-C-Ag nanocomposite coatings and Cu or CuSn substrates. Samples were subjected to thermal annealing studies by exposure to 400 degrees C for 11 h. Dense diffusion barrier and coating hindered Cu from diffusing to the surface. This condition was achieved for electroplated Ni in combination with magnetron-sputtered Ti-Si-C and Ti-Si-C-Ag layers deposited at 230 degrees C and 300 degrees C. and sputtered Ti or Ni layers in combination with Ti-Si-C-Ag deposited at 300 degrees C.

Place, publisher, year, edition, pages
2012. Vol. 206, no 8-9, 2558-2565 p.
Keyword [en]
Titanium carbide, Nanocomposite, Physical vapor deposition (PVD), Diffusion, Barrier, Annealing
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-172156DOI: 10.1016/j.surfcoat.2011.11.014ISI: 000300458500069OAI: oai:DiVA.org:uu-172156DiVA: diva2:513747
Available from: 2012-04-03 Created: 2012-04-02 Last updated: 2017-12-07Bibliographically approved

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Lewin, Erik

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