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Growth of Ti-C nanocomposite films by reactive high power impulse magnetron sputtering under industrial conditions
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
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2012 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, no 8-9, 2396-2402 p.Article in journal (Refereed) Published
Abstract [en]

Titanium carbide (TiC) films were deposited employing high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) in an Ar-C2H2 atmosphere of various compositions. Analysis of the structural, bonding and compositional characteristics revealed that the deposited films are either TiC and hydrogenated amorphous carbon (a-C:H) nanocomposites, nanocrystalline TiC, or Ti/Tic, depending on the C/Ti ratio. It was found that Ti-C films grown by HiPIMS show a C/Ti ratio of close to 1 for a wide C2H2 flow range (4-15 sccm), with free C ranging from 0 to 20%. Thus, films ranging from near stoichiometric single phase TiC to TiC/a-C:H nanocomposites can be synthesized. This was not the case for DCMS, where films grown using similar deposition rates as for HiPIMS formed larger fractions of amorphous C matrix, thus being nanocomposites in the same C2H2 (above 4 sccm) flow range. For a C/Ti ratio of 1 the resistivity is low (4-8 x 10(2) mu Omega cm) for the HiPIMS films, and high (>100x 10(2) mu Omega cm) for the DCMS films. The hardness also shows a big difference with 20-27 and 6-10 GPa for HiPIMS and DCMS grown films, respectively.

Place, publisher, year, edition, pages
2012. Vol. 206, no 8-9, 2396-2402 p.
Keyword [en]
HiPIMS, HPPMS, Reactive magnetron sputtering, TiC, a-C:H Nanocomposite
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-172155DOI: 10.1016/j.surfcoat.2011.10.039ISI: 000300458500047OAI: oai:DiVA.org:uu-172155DiVA: diva2:513748
Available from: 2012-04-03 Created: 2012-04-02 Last updated: 2014-05-14Bibliographically approved

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Lewin, ErikJansson, Ulf
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