Negative electron mobility in diamond
2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, no 17, 172103- p.Article in journal (Refereed) Published
By measuring the drift velocity of electrons in diamond as a function of applied electric field, wedemonstrate that ultra-pure diamond exhibits negative differential electron mobility in the  directionbelow 140 K. Negative electron mobility is normally associated with III–V or II–VI semiconductors withan energy difference between different conduction band valleys. The observation of negative mobility indiamond, an elemental group IV semiconductor, is explained in terms of repopulation effects betweendifferent equivalent conduction band valleys using a model based on the Boltzmann equation.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012. Vol. 100, no 17, 172103- p.
Engineering and Technology
Research subject Engineering Science with specialization in Science of Electricity
IdentifiersURN: urn:nbn:se:uu:diva-173582DOI: 10.1063/1.4705434ISI: 000303340300034OAI: oai:DiVA.org:uu-173582DiVA: diva2:524556