Low Temperature Hole Transport in Single Crystal Synthetic Diamond
2012 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795Article in journal (Refereed) Published
Hole transport properties of boron-doped single-crystalline (SC) CVD diamond, growth in the<100> crystallographic direction, has been investigated. The measurement was carried out in thetemperature range 10 T 80 K. A Time-of-Flight (ToF) measurement, using a 213 nm, pulsedultraviolet laser for excitation was performed on high-purity SC diamonds to study hole driftmobility in the low-injection regime and the scattering mechanisms involved in the process. Asaturation of the hole mobility was observed. This indicates that impurity scattering is thedominating scattering process at these low temperatures.
Place, publisher, year, edition, pages
ToF, time-of-flight, scattering, drift velocity, CVD diamond, single crystal diamond
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-173598OAI: oai:DiVA.org:uu-173598DiVA: diva2:524558