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Self-heating and scaling effects of multi-finger LDMOS transistors on SOI and Si-on-SiC hybrid substrates with diamond heat-spreading layer
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2012 (English)In: Proc. of EUROSOI 2012 workshop: VIII workshop on silicon on insulator technology, devices and circuits, Jan 23-25, Montpellier, France, 2012, 31-32 p.Conference paper, Published paper (Refereed)
Abstract [en]

An extensive simulation study of self-heating effects inSOI and Silicon-on-SiC hybrid substrates is presented.2D electrothermal device simulations of multi-finger RFpowerLDMOS-transistors on the different substrates arecarried out in order to study the self-heating and scalingeffects. Introduction of a thin diamond layer between thesilicon device layer and the substrate is shown tosignificantly improve the thermal performance andscaling under certain conditions, and points out theimportance of good lateral heat conduction.

Place, publisher, year, edition, pages
2012. 31-32 p.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-174502OAI: oai:DiVA.org:uu-174502DiVA: diva2:527458
Conference
EUROSOI 2012
Available from: 2012-05-21 Created: 2012-05-21 Last updated: 2013-11-12

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Olsson, JörgenLotfi, Sara

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