Self-heating and scaling effects of multi-finger LDMOS transistors on SOI and Si-on-SiC hybrid substrates with diamond heat-spreading layer
2012 (English)In: Proc. of EUROSOI 2012 workshop: VIII workshop on silicon on insulator technology, devices and circuits, Jan 23-25, Montpellier, France, 2012, 31-32 p.Conference paper (Refereed)
An extensive simulation study of self-heating effects inSOI and Silicon-on-SiC hybrid substrates is presented.2D electrothermal device simulations of multi-finger RFpowerLDMOS-transistors on the different substrates arecarried out in order to study the self-heating and scalingeffects. Introduction of a thin diamond layer between thesilicon device layer and the substrate is shown tosignificantly improve the thermal performance andscaling under certain conditions, and points out theimportance of good lateral heat conduction.
Place, publisher, year, edition, pages
2012. 31-32 p.
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-174502OAI: oai:DiVA.org:uu-174502DiVA: diva2:527458