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RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for sillicon-carbide synthesis study
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2006 (English)In: Nucl. Instr. Meth. in Phys. Res, no 249, 859-864 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2006. no 249, 859-864 p.
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Engineering and Technology
URN: urn:nbn:se:uu:diva-25911OAI: oai:DiVA.org:uu-25911DiVA: diva2:53685
Available from: 2007-02-14 Created: 2007-02-14 Last updated: 2016-07-12

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