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Nucleation and Resistivity of Ultrathin TiN Films Grown by High-Power Impulse Magnetron Sputtering
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
2012 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 33, no 7, 1045-1047 p.Article in journal (Refereed) Published
Abstract [en]

TiN films have been grown on SiO2 by reactive high-power impulse magnetron sputtering (HiPIMS) at temperatures of 22 degrees C-600 degrees C. The film resistance is monitored in situ to determine the coalescence and continuity thicknesses that decrease with increasing growth temperature with a minimum of 0.38 +/- 0.05 nm and 1.7 +/- 0.2 nm, respectively, at 400 degrees C. We find that HiPIMS-deposited films have significantly lower resistivity than dc magnetron sputtered (dcMS) films on SiO2 at all growth temperatures due to reduced grain boundary scattering. Thus, ultrathin continuous TiN films with superior electrical characteristics can be obtained with HiPIMS at reduced temperatures compared to dcMS.

Place, publisher, year, edition, pages
2012. Vol. 33, no 7, 1045-1047 p.
Keyword [en]
Diffusion barrier, high-power impulse magnetron sputtering (HiPIMS), resistivity, TiN
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-178093DOI: 10.1109/LED.2012.2196018ISI: 000305835300043OAI: oai:DiVA.org:uu-178093DiVA: diva2:542104
Available from: 2012-07-30 Created: 2012-07-27 Last updated: 2012-07-30Bibliographically approved

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