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Influence of long-range substrate roughness on disorder in V-groove quantum wire structures
Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Experimental Physics. Elektronmikroskopi och Nanoteknologi.
Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.
Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.
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2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 100, no 12, 123509- p.Article in journal (Refereed) Published
Abstract [en]

The observation and the interpretation of line splitting in photoluminescence and cathodoluminescence spectra of GaAsAlGaAs V-groove quantum wires (QWRs) are reported. The QWR emission line splits into two peaks whose intensities oscillate systematically along the axis of the wire. Combining atomic force microscopy and cathodoluminescence measurements, we show a clear correlation between the surface topography of the V-groove and the individual peak intensities. We elucidate the relationship between the V-groove sidewall roughness and the shape at its bottom, and explain their impact on the QWR formation using a two-dimensional growth model accounting for self-limited growth in each V-groove domain. The influence of the long-range substrate roughness on the QWR spectral features is thus clarified. The study provides guidelines for improving QWR uniformity in order to achieve near-ideal model systems for one-dimensional semiconductors.

Place, publisher, year, edition, pages
2006. Vol. 100, no 12, 123509- p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-26508DOI: 10.1063/1.2401272OAI: oai:DiVA.org:uu-26508DiVA: diva2:54282
Available from: 2007-04-17 Created: 2007-04-17 Last updated: 2016-07-12

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Leifer, Klaus

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