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Structural properties of epitaxial gamma-Al2O3(111) thin films on 4H-SiC(0001)
Department of Chemical and Biomolecular Engineering, University of California.
Department of Chemical and Biomolecular Engineering, University of California.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 6, 061916- p.Article in journal (Refereed) Published
Abstract [en]

Al2 O3 thin films were grown on 4H-SiC (0001) by thermal atomic layer deposition and were crystallized to the γ- Al2 O3 phase by rapid thermal annealing in N2 at 1100 °C. The films were found to be chemically stable during processing based on x-ray photoelectron spectroscopy. The change in film structure was initially confirmed by reflection high-energy electron diffraction. As shown by high-resolution transmission electron microscopy images, the abrupt interface of the as-deposited films with the 4H-SiC substrate was preserved during crystallization, indicating no interfacial reaction. Selected area electron diffraction and synchrotron-based x-ray diffraction established an epitaxial relationship of γ- Al2 O3 (111) ∥ 4H-SiC (0001) and in-plane orientation of γ- Al2 O3 (1 1- 0) ∥ 4H-SiC (11 2- 0). No other alumina phases or orientations were observed and no in-plane misorientation was observed in the 27 Å Al2 O3 films. The full width at half maximum of the γ- Al2 O3 (222) rocking curve is 0.056°, indicating a lack of mosaic spread and a high-quality crystalline film. Twinning around the γ- Al2 O3 [111] axis was the only defect observed in these films.

Place, publisher, year, edition, pages
2007. Vol. 90, no 6, 061916- p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-26526DOI: 10.1063/1.2435978͔ISI: 000244162300033OAI: oai:DiVA.org:uu-26526DiVA: diva2:54300
Available from: 2008-01-18 Created: 2008-01-18 Last updated: 2017-12-07Bibliographically approved

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Lu, JunBlom, Hans-Olof

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