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Vacancy related defect profiles in MeV cluster-ion irradiated silicon
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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1995 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 106, no 1-4, 233-236 p.233-236 p.Article in journal (Refereed) Published
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1995. Vol. 106, no 1-4, 233-236 p.233-236 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-26822DOI: 10.1016/0168-583X(95)00709-1OAI: oai:DiVA.org:uu-26822DiVA: diva2:54716
Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2017-12-07Bibliographically approved

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Olsson, Jörgen

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