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Conformal Ni-silicide formation over three-dimensional device structures
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 5, 053508- p.Article in journal (Refereed) Published
Abstract [en]

This letter reports on conformal formation of ultrathin Ni-silicide films over a three-dimension structure relevant to the most advanced tri-gate transistor architecture. This is achieved by combining ionization of the sputtered Ni atoms with application of an appropriate bias to the Si substrate during the sputter-deposition of Ni films. In comparison, use of ordinary DC sputtering for Ni deposition results in thinner or less uniform silicide films on the vertical sidewalls than on the top surface of the three-dimensional structure. The roughened Si sidewall surface is ascribed to be responsible for a deteriorated thermal stability of the resultant silicide films.

Place, publisher, year, edition, pages
2012. Vol. 101, no 5, 053508- p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-180126DOI: 10.1063/1.4742139ISI: 000307676600098OAI: oai:DiVA.org:uu-180126DiVA: diva2:548235
Available from: 2012-08-30 Created: 2012-08-30 Last updated: 2017-12-07Bibliographically approved

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Gao, XindongKubart, TomasZhang, Zhi-BinZhang, Shi-Li

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