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Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina.
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina.
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 9, 092101- p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2012. Vol. 101, no 9, 092101- p.
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Electrical Engineering, Electronic Engineering, Information Engineering
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Engineering Science with specialization in Electronics
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URN: urn:nbn:se:uu:diva-180127DOI: 10.1063/1.4748111ISI: 000308408100029OAI: oai:DiVA.org:uu-180127DiVA: diva2:548245
Available from: 2012-08-30 Created: 2012-08-30 Last updated: 2017-12-07Bibliographically approved

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Zhu, ZhiweiGao, XindongZhang, Shi-Li

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