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Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. SIGNALS AND SYSTEMS.
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1998 (English)In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, ISSN 0018-9480, Vol. 46, no 5, 695-700 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, the design of an active millimeterwave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, wh

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 1998. Vol. 46, no 5, 695-700 p.
Keyword [en]
TRANSISTORS
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Signal Processing
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URN: urn:nbn:se:uu:diva-27151OAI: oai:DiVA.org:uu-27151DiVA: diva2:55045
Note
Addresses: Bruce SPO, Uppsala Univ, Signals & Syst Grp, S-75120 Uppsala, Sweden. Uppsala Univ, Signals & Syst Grp, S-75120 Uppsala, Sweden. CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA. TIMIC Semicond GmbH, D-74025 Heilbronn, Germany. Daimler Benz AG, ReAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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