Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells
2013 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 22, no 1, 10-17 p.Article in journal (Refereed) Published
Cu2ZnSnS4 (CZTS) is a promising thin-film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We introduce a two-step process for fabrication of CZTS films, involving reactive sputtering of a Cu-Zn-Sn-S precursor followed by rapid annealing. X-ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high-temperature cubic modification reported for CZTS. A few minutes of annealing at 550 °C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with Jsc and Voc both appearing to be limited by interface recombination.
Place, publisher, year, edition, pages
2013. Vol. 22, no 1, 10-17 p.
CZTS, Cu2ZnSnS4, kesterite, reactive sputtering, sulfides, thin film solar cells
Materials Chemistry Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-180994DOI: 10.1002/pip.2265ISI: 000328248500002OAI: oai:DiVA.org:uu-180994DiVA: diva2:552590