uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Temperature and injection dependence of the Shockley-Read-Hall lifetime in electron-irradiated p-type silicon
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Show others and affiliations
1998 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 83, no 8, 4206-4212 p.Article in journal (Refereed) Published
Abstract [en]

The Shockley-Read-Hall (SRH) carrier lifetime in electron-irradiated low-doped p-type silicon was measured at different injection levels and various temperatures. The lifetime under high-level injection was determined using the open-circuit carrier decay

Place, publisher, year, edition, pages
1998. Vol. 83, no 8, 4206-4212 p.
Keyword [en]
PROTON IRRADIATION; TRANSIENT SPECTROSCOPY; CARRIER LIFETIME; RESISTIVITY; ENERGY; SI
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-27366OAI: oai:DiVA.org:uu-27366DiVA: diva2:55261
Note
Addresses: Keskitalo N, Royal Inst Technol, Dept Elect, POB E229, SE-16440 Kista, Sweden. Univ Uppsala, Dept Technol Solid State Elect, SE-75121 Uppsala, Sweden.Available from: 2007-03-01 Created: 2007-03-01 Last updated: 2011-01-14

Open Access in DiVA

No full text

By organisation
Department of Materials ScienceElectronics
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 734 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf