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Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements
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1997 (English)In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, ISSN 0927-0248, Vol. 49, no 1-4, 299-309 p.Article in journal (Refereed) Published
Abstract [en]

The depth-dependent experimental collection functions F(z) of solar cells with CuInS2, CuGaSe2 and CuInSe2 absorber layers are derived from planar electron-beam-induced current (EBIC) measurements. It is shown that F(z) for CuInS2 and CuGaSe2 cells can be

Place, publisher, year, edition, pages
1997. Vol. 49, no 1-4, 299-309 p.
Keyword [en]
CuInSe2; solar cells; heterojunctions; INDUCED-CURRENT PROFILES
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-27575OAI: oai:DiVA.org:uu-27575DiVA: diva2:55470
Note
Addresses: Scheer R, HAHN MEITNER INST BERLIN GMBH, DEPT INTERFACES, GLIENICKER STR 100, D-14109 BERLIN, GERMANY. UNIV STUTTGART, INST PHYS ELECT, D-7000 STUTTGART, GERMANY. UNIV UPPSALA, TEKNIKUM, S-75105 UPPSALA, SWEDEN.Available from: 2007-03-05 Created: 2007-03-05 Last updated: 2011-01-15

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Stolt, Lars

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