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Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1993 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 22, no 1-4, 379-382 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1993. Vol. 22, no 1-4, 379-382 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-181743DOI: 10.1016/0167-9317(93)90192-8OAI: oai:DiVA.org:uu-181743DiVA: diva2:557459
Available from: 2012-09-27 Created: 2012-09-27 Last updated: 2017-12-07Bibliographically approved

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Olsson, Jörgen

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