Myth and facts of ultrathin metal silicide films formed on Si(100)
2012 (English)In: China Semiconductor Technology International Conference (CSTIC) 2012, 2012Conference paper, Presentation (Refereed)
This talk will focus on recent advancements in the formation of ultrathin Ni1-xPtx silicide films targeting CMOS technology nodes beyond 22 nm where silicide films much thinner than 10 nm are required according to the technology roadmap. The past experience in using metal silicides for various generations of CMOS technology indicates that control of silicide formation in the sub-10 nm regime is a foremost urgent issue especially for devices fabricated on UTB/ETB-SOI substrates or with nanowire-Fins. Our recent results show that both initial metal thickness and Pt fraction in the as-deposited Ni1-xPtx films are critical parameters determining the resultant silicide films in terms of phase formation, film thickness, specific resistivity, interfacial morphology and morphological stability. The phenomenon is discussed with a particular mention of thermodynamic effects; Surface energy plays an increasingly important role for thinner films with an increasing surface to volume ratio. To illustrate the critical importance of the entropy of mixing in the formation of ternary silicide alloy films, our recent results on silicide formation and subsequent morphological stability with ultrathin Co1-xNix films are presented and discussed as well. The talk will end with the presentation of a novel and economical process for a controllable formation of Ni1-xPtx silicide films below 8 nm in thickness, as well as its implications in advanced CMOS technology.
Place, publisher, year, edition, pages
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-181982OAI: oai:DiVA.org:uu-181982DiVA: diva2:558202
China Semiconductor Technology International Conference (CSTIC) 2012