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In situ growth of evaporated TiO2 thin films using oxygen radicals: Effect of deposition temperature
Uppsala University.
Uppsala University.
Uppsala University.
1998 (English)In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 16, no 4, 2495-2500 p.Article in journal (Other scientific) Published
Abstract [en]

The growth and characterization of TiO2 thin films deposited by electron-beam evaporation of TiO2 have been studied. The growing film was exposed to a flux of atomic oxygen supplied from an oxygen radical beam source at a total deposition pressure of 1 x

Place, publisher, year, edition, pages
AMER INST PHYSICS , 1998. Vol. 16, no 4, 2495-2500 p.
Keyword [en]
CHEMICAL-VAPOR-DEPOSITION; ELECTRICAL-PROPERTIES; STRUCTURAL-PROPERTIES; REACTIVE EVAPORATION; PLASMA OXIDATION; ATOMIC OXYGEN; BEAM
Identifiers
URN: urn:nbn:se:uu:diva-28374OAI: oai:DiVA.org:uu-28374DiVA: diva2:56270
Note
Addresses: Grahn JV, Kungl Tekn Hgsk, Dept Elect, SE-16440 Kista, Sweden. Kungl Tekn Hgsk, Dept Elect, SE-16440 Kista, Sweden. Uppsala Univ, SE-75121 Uppsala, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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