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Extraction of thermal time constant in HBTs using small signal measurements
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. SIGNALS AND SYSTEMS.
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1997 (English)In: ELECTRONICS LETTERS, ISSN 0013-5194, Vol. 33, no 2, 165-167 p.Article in journal (Refereed) Published
Abstract [en]

A novel method for finding the thermal time constant of HBTs is proposed. It utilises small signal measurements in the frequency domain of the typical negative differential resistance found int he active region, i.e. normal bias conditions for the device.

Place, publisher, year, edition, pages
IEE-INST ELEC ENG , 1997. Vol. 33, no 2, 165-167 p.
Keyword [en]
heterojunction bipolar transistors; semiconductor device characterisation
National Category
Signal Processing
URN: urn:nbn:se:uu:diva-28396OAI: oai:DiVA.org:uu-28396DiVA: diva2:56292
Addresses: Sign and syst, UNIV UPPSALA, BOX 528, S-75120 UPPSALA, SWEDEN. UNIV ULM, ABT EBS, D-89069 ULM, GERMANY.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-15

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