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Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1998 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 72, no 16, 1969-1971 p.Article in journal (Other scientific) Published
Abstract [en]

Ten million atom multiresolution molecular-dynamics simulations are performed on parallel computers to determine atomic-level stress distributions in a 54 nm nanopixel on a 0.1 mu m silicon substrate. Effects of surfaces, edges, and lattice mismatch at th

Place, publisher, year, edition, pages
AMER INST PHYSICS , 1998. Vol. 72, no 16, 1969-1971 p.
Keyword [en]
SILICON-NITRIDE; FILMS
Identifiers
URN: urn:nbn:se:uu:diva-28507OAI: oai:DiVA.org:uu-28507DiVA: diva2:56403
Note
Addresses: Bachlechner ME, Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA. Louisiana State Univ, DeAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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