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Plasma emission monitoring (PEM) controlled DC reactive sputtered ZnO:Al thin films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.ORCID iD: 0000-0002-8279-5163
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2012 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 86, no 12, 1939-1944 p.Article in journal (Refereed) Published
Abstract [en]

High deposition rate ZnO:Al films have been produced at room temperature by reactive DC sputtering using a plasma emission monitoring (PEM) control system. We have investigated the relationship between structural, optical and electrical properties of the ZnO:Al films. Crystal structures of the films have been studied by X-ray diffraction. Optimum ZnO:Al films, with 17-40 Omega/square sheet resistance range and transmittance approaching 88% in the visible region, exhibited a hexagonal ZnO structure with preferential (002) orientation and crystallite sizes of about 27 nm. Resistive transparent films displayed a more random orientation showing peaks at (100) and (102) orientations. Dark "metallic" films were shown to consist of mainly zinc. The optimal ZnO:Al film has been determined from a figure of merit based on power losses due to absorption and series resistance in the ZnO:Al films. It is highly transparent, with low resistance, pronounced (002) peak and large crystallite size. (C) 2012 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
2012. Vol. 86, no 12, 1939-1944 p.
Keyword [en]
PEM setpoint, Discharge voltage, Sheet resistance, Transmittance, TCO, DC reactive sputtering, ZnO:Al, X-ray diffraction
National Category
Physical Sciences Engineering and Technology
Research subject
Engineering Science with specialization in Solid State Physics
URN: urn:nbn:se:uu:diva-183914DOI: 10.1016/j.vacuum.2012.03.052ISI: 000308672000030OAI: oai:DiVA.org:uu-183914DiVA: diva2:565351
Available from: 2012-11-07 Created: 2012-11-05 Last updated: 2014-07-15Bibliographically approved

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Niklasson, Gunnar A.
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