uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Degradation of InGaAsP/InP-based multiquantum-well lasers
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/ELECTRONIC MATERIALS.
1999 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 86, no 5, 2397-2406 p.Article in journal (Other scientific) Published
Abstract [en]

The formation of dark-area defects (DADs) along the active stripe in InGaAsP/InP-based buried-heterostructure multiquantum-well (BH-MQW) lasers, observed in electroluminescence and photoluminescence (PL) after degradation, is found to be related to disloc

Place, publisher, year, edition, pages
AMER INST PHYSICS , 1999. Vol. 86, no 5, 2397-2406 p.
Keyword [en]
LASING THRESHOLD CURRENT; DIODES; INP
Identifiers
URN: urn:nbn:se:uu:diva-28700OAI: oai:DiVA.org:uu-28700DiVA: diva2:56596
Note
Addresses: Kallstenius T, Uppsala Univ, Div Sci Mat, S-75221 Uppsala, Sweden. Uppsala Univ, Div Sci Mat, S-75221 Uppsala, Sweden. Ericsson Components AB, Microelect Div, S-16481 Stockholm, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

Open Access in DiVA

No full text

By organisation
Department of Materials Science

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 378 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf