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Studies of internal structure in InGaAsP/InP-based lasers using atomic force microscopy in combination with selective etching
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/ELECTRONIC MATERIALS.
1999 (English)In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 146, no 2, 749-754 p.Article in journal (Other scientific) Published
Abstract [en]

We have used cross-sectional atomic force microscopy in combination with dopant-selective etching to study structural details in InGaAsP/InP-based laser diodes. The different etch rates of p-type, n-type, and semi-insulating InP allowed us to relate topog

Place, publisher, year, edition, pages
ELECTROCHEMICAL SOC INC , 1999. Vol. 146, no 2, 749-754 p.
Keyword [en]
ZINC DIFFUSION; INP; IRON; ZN
Identifiers
URN: urn:nbn:se:uu:diva-28722OAI: oai:DiVA.org:uu-28722DiVA: diva2:56618
Note
Addresses: Kallstenius T, Univ Uppsala, Div Sci Mat, S-75121 Uppsala, Sweden. Univ Uppsala, Div Sci Mat, S-75121 Uppsala, Sweden. Ericsson Components AB, Microelect Div, S-16481 Stockholm, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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