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Sample preparation of InGaAsP/InP-based lasers for plan-view transmission electron microscopy using selective chemical thinning
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/ELECTRONIC MATERIALS.
1999 (English)In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 146, no 2, 758-760 p.Article in journal (Other scientific) Published
Abstract [en]

A sample preparation method for transmission electron microscopy plan-views of InGaAsP/InP-based laser diodes based on selective chemical thinning is described. Using this method, it is possible to prepare samples with more than 50% of the active InGaAsP

Place, publisher, year, edition, pages
ELECTROCHEMICAL SOC INC , 1999. Vol. 146, no 2, 758-760 p.
Identifiers
URN: urn:nbn:se:uu:diva-28723OAI: oai:DiVA.org:uu-28723DiVA: diva2:56619
Note
Addresses: Kallstenius T, Uppsala Univ, Div Sci Mat, S-75221 Uppsala, Sweden. Uppsala Univ, Div Sci Mat, S-75221 Uppsala, Sweden. Ericsson Components AB, Microelect Div, S-16481 Stockholm, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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