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Structural studies of InGaAsP/InP-based lasers using cross-sectional atomic-force microscopy (XAFM) and selective etching
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. MATERIALS SCIENCE/ELECTRONIC MATERIALS.
1997 (English)In: MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, ISSN 0951-3248, no 157, 611-614 p.Article in journal (Other scientific) Published
Abstract [en]

Cross-sections of fully processed InGaAsP/InP-based laser diodes have been studied using selective etching in combination with atomic-force microscopy (AFM) and electron-beam induced-current (EBIC) imaging. Detailed investigations of the etched topography

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 1997. no 157, 611-614 p.
Keyword [en]
URN: urn:nbn:se:uu:diva-28758OAI: oai:DiVA.org:uu-28758DiVA: diva2:56654
Addresses: Kallstenius T, Uppsala Univ, Div Mat Sci, Box 534, S-75221 Uppsala, Sweden. Uppsala Univ, Div Mat Sci, S-75221 Uppsala, Sweden. Ericsson Components AB, S-16481 Kista, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-15

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