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Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl-2
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
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1997 (English)In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 15, no 3, 686-691 p.Article in journal (Refereed) Published
Abstract [en]

The angular dependence of the etch rate in reactive ion etching (RIE) and inductively coupled plasma (ICP) systems for polysilicon etching with SF6 and Cl-2 is determined using a recently developed direct measurement method. The latter utilizes specially

Place, publisher, year, edition, pages
1997. Vol. 15, no 3, 686-691 p.
Keyword [en]
ION; SURFACE; SILICON; MASS; MECHANISMS
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-28775OAI: oai:DiVA.org:uu-28775DiVA: diva2:56671
Note
Addresses: UNIV UPPSALA, DEPT MAT SCI, S-75121 UPPSALA, SWEDEN.Available from: 2007-03-02 Created: 2007-03-02 Last updated: 2011-01-15

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Katardjiev, IliaBerg, SörenBlom, Hans-Olof

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