Light-enhanced reverse breakdown in Cu(In,Ga)Se2 solar cells
2013 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 535, 326-330 p.Article in journal (Refereed) Published
Partial shading of solar modules can subject shaded cells to significant reverse bias, often large enough toforce them into electrical breakdown, possibly resulting in irreversible damage. Therefore, better understandingof reverse current–voltage characteristics might lead to improvements in the design of solar modules. Thefocus of this study is the breakdown behavior of Cu(In,Ga)Se2 (CIGS) cells in darkness and under illumination.Two series of CIGS cells were investigated, with CdS and Zn–Sn–O buffer layers of varying thickness. Electricalbreakdown was found to be highly dependent on the buffer layer. Under blue illumination a remarkable decreasein breakdown voltage was observed for both buffer types. Metastable defects in the buffer/CIGS interfaceregion are tentatively proposed as the source of this effect and tunnelling is suggested as the mainmechanism responsible for breakdowns.
Place, publisher, year, edition, pages
Elsevier, 2013. Vol. 535, 326-330 p.
copper indium gallium selenide, photoelectric properties, reverse breakdown, defects
Engineering and Technology Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-187534DOI: 10.1016/j.tsf.2012.09.022ISI: 000318973600073OAI: oai:DiVA.org:uu-187534DiVA: diva2:575060