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Interdiffusion in Au(120 nm)/Ni(70 nm) thin films at the low-temperature annealing in the different atmospheres
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
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2013 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 87, 69-74 p.Article in journal, Meeting abstract (Refereed) Published
Abstract [en]

The development of the interdiffusion processes and the surface morphology changes in thin films of Au(120 nm)/Ni(70 nm) during annealing at 200 degrees C for 20 min in vacuum with different residual atmosphere pressures of 10(-3) and 10(-6) Pa and in an environment of hydrogen at a pressure of 5 x 10(2) Pa have been studied. Secondary ion mass spectrometry, Auger electron spectroscopy, X-ray diffraction, optical microscopy, atomic force microscopy and scanning electron microscopy were used. Surface microdefects that form in the films are related to the local oxidation of nickel and to the stress that arises due to interdiffusion. Defect formation and reactions at the surface are found to be controlling factors in the transport of nickel to the surface and in the observed morphology.

Place, publisher, year, edition, pages
2013. Vol. 87, 69-74 p.
Keyword [en]
Thin films, Dimples, Interdiffusion, Au, Ni, Ni oxide, Annealing
National Category
Natural Sciences
URN: urn:nbn:se:uu:diva-187616DOI: 10.1016/j.vacuum.2012.07.005ISI: 000310549900013OAI: oai:DiVA.org:uu-187616DiVA: diva2:575469
The Eleventh International Symposium on Sputtering and Plasma Processes (ISSP 2011) 6–8 July 2011, Kyoto, Japan
Available from: 2012-12-10 Created: 2012-12-10 Last updated: 2012-12-10Bibliographically approved

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Rennie, Adrian R.
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